Measurement examples

Fabry-Perot resonator Ultra-low loss SiC wafer with loss factor of less than 10-4（110 – 170 GHz）

Overview

Silicon carbide (SiC) was thought to have low loss, but until now there had been no reliable measurement data. EM Labs presented measurement data on silicon carbide using a Fabry-Perot resonator at the 2024 IMS/ARFTG, and the world was astonished. Related papers were also accepted for publication in the IEEE Journal of Microwave and Applied Physics Letters by Cornell University, a joint research partner. This data compares the measured values of the dielectric constant (Dk) and dielectric loss tangent (Df) of silicon carbide, sapphire and fused silica. It is clear that silicon carbide has lower loss characteristics than sapphire. As the EM Lab Fabry-Perot resonator can stably measure low-loss data below 10-4 at high frequencies of 110-170GHz.

System Configuration

  • Fabry-Perot resonator D band N1501AFP-D
  • Fabry-Perot Resonator Software N1501AFPSW
  • Network analyzer: N5290A (Keysight Technologies)
  • Mini VNAX frequency extension module: N5262BW06 (Keysight Technologies)

Samples

Silicon carbide (SiC) 98μm

Sapphire 306μm

fused silica 173μm

Results